RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3333C16-4GRRD 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3333C16-4GRRD 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3333C16-4GRRD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
38
Around 37% lower latency
Faster reading speed, GB/s
16
14.5
Average value in the tests
Faster write speed, GB/s
12.5
10.5
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3333C16-4GRRD 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3333C16-4GRRD 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
38
Read speed, GB/s
16.0
14.5
Write speed, GB/s
12.5
10.5
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3017
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3333C16-4GRRD 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3333C16-4GRRD 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Corsair CMW8GX4M1D3000C16 8GB
Kingston 99U5428-063.A00LF 8GB
Corsair CMN32GX4M2Z3200C16 16GB
Qimonda 72T128420EFA3SB2 1GB
Essencore Limited KD48GS481-26N1600 8GB
SK Hynix HYMP112U64CP8-S6 1GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-4000C18-32GTZR 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMW32GX4M4Z3200C16 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-3200C16-8GVR 8GB
Kingston 9905403-444.A00LF 4GB
Kingston 9905663-007.A00G 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
G Skill Intl F4-3600C16-8GTZ 8GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMK32GX4M4B3200C14 8GB
SK Hynix HMA82GS6DJR8N-XN 16GB
Samsung M471A2K43EB1-CWE 16GB
Report a bug
×
Bug description
Source link