RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3333C16-4GRRD 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3333C16-4GRRD 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3333C16-4GRRD 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
38
Around 37% lower latency
Faster reading speed, GB/s
16
14.5
Average value in the tests
Faster write speed, GB/s
12.5
10.5
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3333C16-4GRRD 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3333C16-4GRRD 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
38
Read speed, GB/s
16.0
14.5
Write speed, GB/s
12.5
10.5
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3017
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3333C16-4GRRD 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3333C16-4GRRD 4GB
Kingston 9905471-001.A01LF 2GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
AMD AE34G1601U1 4GB
Corsair CMK32GX4M4A2133C15 8GB
Samsung M378B5673FH0-CH9 2GB
SK Hynix MMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
Samsung M393B1G70BH0-YK0 8GB
Corsair CMH16GX4M2Z3600C18 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK16GX4M2E3200C16 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston XN205T-MIE2 16GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BL16G32C16S4B.8FB 16GB
Kingston 9905471-002.A00LF 2GB
Kingston ACR26D4S9S1KA-4 4GB
Mushkin 991586 2GB
UMAX Technology 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMW64GX4M4D3600C18 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Essencore Limited KD4AGS88C-32N220D 16GB
Kingston 9905403-156.A00LF 2GB
SK Hynix HMA851S6JJR6N-VK 4GB
Report a bug
×
Bug description
Source link