RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C14-8GTZR 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4000C14-8GTZR 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-4000C14-8GTZR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
27
Around 11% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-4000C14-8GTZR 8GB
Report a bug
Faster reading speed, GB/s
24.7
16
Average value in the tests
Faster write speed, GB/s
19.9
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4000C14-8GTZR 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
27
Read speed, GB/s
16.0
24.7
Write speed, GB/s
12.5
19.9
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
4174
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-4000C14-8GTZR 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
A-DATA Technology DQVE1908 512MB
Kingmax Semiconductor GLNH23F-18---------- 16GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMW32GX4M2C3000C15 16GB
King Tiger Technology Tigo-X3-3200MHz-8G 8GB
Kingston KF552C40-16 16GB
Samsung M393B1K70CH0-CH9 8GB
Kingston ACR24D4U7S8MB-8 8GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-3600C19-8GVRB 8GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston 9905701-022.A00G 16GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology BL16G30C15U4B.M16FE1 16GB
PUSKILL DDR3 1600 8G 8GB
Kingston HP37D4U1S8ME-8X 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C14-8GTZR 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Apacer Technology 78.C1GQB.4032B 8GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3200C15-16GVK 16GB
Report a bug
×
Bug description
Source link