RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4266C19-8GTZSW 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-4266C19-8GTZSW 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-4266C19-8GTZSW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-4266C19-8GTZSW 8GB
Report a bug
Below the latency in the PassMark tests, ns
17
24
Around -41% lower latency
Faster reading speed, GB/s
22.1
16
Average value in the tests
Faster write speed, GB/s
18.0
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-4266C19-8GTZSW 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
17
Read speed, GB/s
16.0
22.1
Write speed, GB/s
12.5
18.0
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3847
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-4266C19-8GTZSW 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378A1G43DB0-CPB 8GB
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
Kingston 99P5474-014.A00LF 4GB
Samsung M378A1K43DB2-CTD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4266C19-8GTZSW 8GB
Kingston 9905403-038.A00LF 4GB
Kingston 99U5402-052.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Kingston 16ATF2G64AZ-2G1B1 8GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston DNU540DR4NABND1 2GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix MMA82GS6CJR8N-VK 16GB
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5170EH1-CH9 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KF3733C19D4/16GX 16GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
A-DATA Technology DOVF1B163G2G 2GB
ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M378A1K43BB1-CTD 16GB
Samsung M395T2863QZ4-CF76 1GB
Kingston XF875V-MIH 8GB
Report a bug
×
Bug description
Source link