RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 16ATF2G64AZ-2G3B1 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
35
Around 31% lower latency
Faster reading speed, GB/s
16
15
Average value in the tests
Faster write speed, GB/s
12.5
10.4
Average value in the tests
Reasons to consider
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
35
Read speed, GB/s
16.0
15.0
Write speed, GB/s
12.5
10.4
Memory bandwidth, mbps
19200
19200
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2925
2672
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 16ATF2G64AZ-2G3B1 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905668-001.A00G 8GB
TwinMOS 8DPT5MK8-TATP 2GB
V-GEN D4S8GL32A8TS 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3600C14-8GTZNB 8GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston KWTHG4-MIE 16GB
Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
PNY Electronics PNY 2GB
Patriot Memory (PDP Systems) PSD432G32002 32GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston KHX3300C16D4/4GX 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hewlett-Packard 7EH61AA# 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905700-046.A00G 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Apacer Technology D22.2221ZA.001 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT4G4DFS8213.C8FHP 4GB
Kingston KVR533D2N4 512MB
Samsung M474A2K43BB1-CRC 16GB
Report a bug
×
Bug description
Source link