RAM comparison Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M392B5273CH0-YH9 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M392B5273CH0-YH9 4GB

Overall score

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Below the latency in the PassMark tests, ns

24 28

Around 14% lower latency
Faster reading speed, GB/s

16 9.9

Average value in the tests
Faster write speed, GB/s

12.5 6.8

Average value in the tests
Higher memory bandwidth, mbps

19200 10600

Around 1.81% higher bandwidth

Reasons to consider
Samsung M392B5273CH0-YH9 4GB

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M392B5273CH0-YH9 4GB

Main characteristics

Other

Description

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
Timings / Clock speed

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)

2925 1871

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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