Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M392B5273CH0-YH9 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

総合得点

Samsung M392B5273CH0-YH9 4GB

Samsung M392B5273CH0-YH9 4GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 28

周辺 14% 低遅延
読み出し速度の高速化、GB/s

16 9.9

テスト平均値
書き込み速度の高速化、GB/s

12.5 6.8

テスト平均値
より高いメモリ帯域幅、mbps

19200 10600

周辺 1.81% 高帯域

Samsung M392B5273CH0-YH9 4GB

考慮すべき理由
Samsung M392B5273CH0-YH9 4GB

バグを報告する

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M392B5273CH0-YH9 4GB

主な特徴

メモリータイプ

DDR4 DDR3
PassMarkにおけるレイテンシー、ns

24 28
読み出し速度、GB/s

16.0 9.9
書き込み速度、GB/秒

12.5 6.8
メモリ帯域幅、mbps

19200 10600

Other

商品説明

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
タイミング / クロック速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 7-7-7-20 / 1333 MHz
ランキングPassMark（多ければ多いほど良い）

2925 1871

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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