RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Transcend Information TS2GLH64V6B 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Transcend Information TS2GLH64V6B 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Transcend Information TS2GLH64V6B 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Reasons to consider
Transcend Information TS2GLH64V6B 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
24
Around -9% lower latency
Faster reading speed, GB/s
17.9
16
Average value in the tests
Faster write speed, GB/s
14.5
12.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Transcend Information TS2GLH64V6B 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
22
Read speed, GB/s
16.0
17.9
Write speed, GB/s
12.5
14.5
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2925
3411
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Transcend Information TS2GLH64V6B 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information TS2GLH64V6B 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
SK Hynix HMA82GU6DJR8N-XN 16GB
Swissbit MEU25664D6BC2EP-30 2GB
Corsair CMK64GX4M2A2666C16 32GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
V-GEN D4H4GL26A8TS5 4GB
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-3000C16-16GVRB 16GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
EVGA 16G-D3-1600-MR 8GB
Gloway International (HK) STK2133C15-8GB 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-16GFX 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
Samsung M378B1G73EB0-CK0 8GB
Corsair CMT32GX4M2E3200C16 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3600C19-8GVSB 8GB
Report a bug
×
Bug description
Source link