RAM comparison Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Overall score

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Reasons to consider
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Higher memory bandwidth, mbps

21300 19200

Around 1.11 higher bandwidth

Complete list of technical specifications

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Main characteristics

Other

Description

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2925 1843

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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