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Kingston 2GB-DDR2 800Mhz 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Compare
Kingston 2GB-DDR2 800Mhz 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Overall score
Kingston 2GB-DDR2 800Mhz 2GB
Overall score
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston 2GB-DDR2 800Mhz 2GB
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Faster reading speed, GB/s
5
18.1
Average value in the tests
Faster write speed, GB/s
2,160.7
15.0
Average value in the tests
Reasons to consider
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
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Below the latency in the PassMark tests, ns
23
43
Around -87% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Kingston 2GB-DDR2 800Mhz 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
43
23
Read speed, GB/s
5,987.5
18.1
Write speed, GB/s
2,160.7
15.0
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
957
3317
Kingston 2GB-DDR2 800Mhz 2GB RAM comparisons
Samsung M378T5663DZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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