Kingston 2GB-DDR2 800Mhz 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异规格评论

差异

Kingston 2GB-DDR2 800Mhz 2GB

需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB

报告一个错误

更快的读取速度，GB/s

5 18.1

测试中的平均数值
更快的写入速度，GB/s

2,160.7 15.0

测试中的平均数值

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 43

左右 -87% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Kingston 2GB-DDR2 800Mhz 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

43 23
读取速度，GB/s

5,987.5 18.1
写入速度，GB/s

2,160.7 15.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

957 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

Crucial Technology CT4G4DFS824A.M8FB 4GB

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology BL8G32C16S4B.M8FE1 8GB

Crucial Technology BL8G32C16S4B.M8FE1 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

AMD R748G2133U2S 8GB

AMD R748G2133U2S 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

SK Hynix GKE160SO102408-3000 16GB

SK Hynix GKE160SO102408-3000 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3200C16-16GSXWB 16GB

G Skill Intl F4-3200C16-16GSXWB 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3800C14-16GTZN 16GB

G Skill Intl F4-3800C14-16GTZN 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Crucial Technology CT32G4SFD832A.C16FB 32GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB