RAM comparison Kingston KHX318C10FR/8G 8GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Kingston KHX318C10FR/8G 8GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score

Kingston KHX318C10FR/8G 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Kingston KHX318C10FR/8G 8GB

Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Below the latency in the PassMark tests, ns

31 60

Around -94% lower latency
Faster reading speed, GB/s

20.5 6.8

Average value in the tests
Faster write speed, GB/s

15.5 5.4

Average value in the tests
Higher memory bandwidth, mbps

25600 14900

Around 1.72 higher bandwidth

Complete list of technical specifications

Kingston KHX318C10FR/8G 8GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Main characteristics

Other

Description

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed

9-10-9-28 / 1866 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)

1411 3649

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns