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Kingston KVR533D2N4 512MB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Kingston KVR533D2N4 512MB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Kingston KVR533D2N4 512MB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston KVR533D2N4 512MB
Report a bug
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
75
Around -103% lower latency
Faster reading speed, GB/s
16
1
Average value in the tests
Faster write speed, GB/s
12.6
1,672.1
Average value in the tests
Higher memory bandwidth, mbps
19200
4200
Around 4.57 higher bandwidth
Specifications
Complete list of technical specifications
Kingston KVR533D2N4 512MB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
75
37
Read speed, GB/s
1,943.5
16.0
Write speed, GB/s
1,672.1
12.6
Memory bandwidth, mbps
4200
19200
Other
Description
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
4-4-4-12 / 533 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
301
2808
Kingston KVR533D2N4 512MB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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