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Kingston KVR533D2N4 512MB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Kingston KVR533D2N4 512MB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Overall score
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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Overall score
star star star star star
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Differences Specifications Comments

Differences

Kingston KVR533D2N4 512MB Reasons to consider
Kingston KVR533D2N4 512MB
Report a bug
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 75
    Around -103% lower latency
  • Faster reading speed, GB/s
    16 left arrow 1
    Average value in the tests
  • Faster write speed, GB/s
    12.6 left arrow 1,672.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 4200
    Around 4.57 higher bandwidth

Specifications

Complete list of technical specifications
Kingston KVR533D2N4 512MB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    75 left arrow 37
  • Read speed, GB/s
    1,943.5 left arrow 16.0
  • Write speed, GB/s
    1,672.1 left arrow 12.6
  • Memory bandwidth, mbps
    4200 left arrow 19200
Other
  • Description
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    4-4-4-12 / 533 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    301 left arrow 2808

Kingston KVR533D2N4 512MB RAM comparisons

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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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