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Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung M378A5244CB0-CVF 4GB
Compare
Lexar Co Limited LD4AU016G-H3200GST 16GB vs Samsung M378A5244CB0-CVF 4GB
Overall score
Lexar Co Limited LD4AU016G-H3200GST 16GB
Overall score
Samsung M378A5244CB0-CVF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Lexar Co Limited LD4AU016G-H3200GST 16GB
Report a bug
Faster reading speed, GB/s
17.8
16
Average value in the tests
Faster write speed, GB/s
12.5
12.3
Average value in the tests
Higher memory bandwidth, mbps
25600
23400
Around 1.09% higher bandwidth
Reasons to consider
Samsung M378A5244CB0-CVF 4GB
Report a bug
Below the latency in the PassMark tests, ns
30
33
Around -10% lower latency
Specifications
Complete list of technical specifications
Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung M378A5244CB0-CVF 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
30
Read speed, GB/s
17.8
16.0
Write speed, GB/s
12.5
12.3
Memory bandwidth, mbps
25600
23400
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
3285
2709
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Samsung M378A5244CB0-CVF 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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