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Micron Technology 16GB 2133MHz DIMM 16GB
Samsung M471A2K43BB1-CTD 16GB
Compare
Micron Technology 16GB 2133MHz DIMM 16GB vs Samsung M471A2K43BB1-CTD 16GB
Overall score
Micron Technology 16GB 2133MHz DIMM 16GB
Overall score
Samsung M471A2K43BB1-CTD 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16GB 2133MHz DIMM 16GB
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Faster reading speed, GB/s
17.3
17
Average value in the tests
Reasons to consider
Samsung M471A2K43BB1-CTD 16GB
Report a bug
Faster write speed, GB/s
14.7
13.2
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16GB 2133MHz DIMM 16GB
Samsung M471A2K43BB1-CTD 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
23
23
Read speed, GB/s
17.3
17.0
Write speed, GB/s
13.2
14.7
Memory bandwidth, mbps
17000
21300
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
3233
3156
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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