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Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M393A2G40EB2-CTD 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB vs Samsung M393A2G40EB2-CTD 16GB

Overall score
star star star star star
Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Overall score
star star star star star
Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

Differences Specifications Comments

Differences

Micron Technology 16JSF25664HZ-1G1F1 2GB Reasons to consider
Micron Technology 16JSF25664HZ-1G1F1 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 44
    Around 34% lower latency
  • Faster reading speed, GB/s
    10.5 left arrow 8.5
    Average value in the tests
  • Faster write speed, GB/s
    7.1 left arrow 5.6
    Average value in the tests
Samsung M393A2G40EB2-CTD 16GB Reasons to consider
Samsung M393A2G40EB2-CTD 16GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 8500
    Around 2.51 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M393A2G40EB2-CTD 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    29 left arrow 44
  • Read speed, GB/s
    10.5 left arrow 8.5
  • Write speed, GB/s
    7.1 left arrow 5.6
  • Memory bandwidth, mbps
    8500 left arrow 21300
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    1425 left arrow 1660

Micron Technology 16JSF25664HZ-1G1F1 2GB RAM comparisons

Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Samsung M393A2G40EB2-CTD 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Samsung M393A2G40EB2-CTD 16GB
Samsung M393A2G40EB2-CTD 16GB
Memory RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
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Kingston K821PJ-MIH 16GB
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Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-2133C15-8GVK 8GB
G Skill Intl F4-2133C15-8GVK 8GB
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
SK Hynix HMA41GR7MFR8N-TF 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
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G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2133C15-4GRB 4GB
G Skill Intl F4-2133C15-4GRB 4GB
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G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
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Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Ramaxel Technology RMUA5110MD78HAF-2666 8GB
Ramaxel Technology RMUA5110MD78HAF-2666 8GB
Memory RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 99U5663-003.A00G 16GB
Kingston 99U5663-003.A00G 16GB
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G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Samsung M391A1K43BB1-CRC 8GB
Samsung M391A1K43BB1-CRC 8GB
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Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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Kingston 99U5702-020.A00G 8GB
Memory RAM
Crucial Technology CT102464BD160B.M16 8GB
Crucial Technology CT102464BD160B.M16 8GB
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Crucial Technology CT8G4SFS8213.M8FB 8GB
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Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
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Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
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Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Panram International Corporation PUD42133C158G2VS 8GB
Panram International Corporation PUD42133C158G2VS 8GB
Memory RAM