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Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Micron Technology 18ASF1G72AZ-2G1B1 8GB

Overall score
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Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Overall score
star star star star star
Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Differences Specifications Comments

Differences

Micron Technology 16JTF51264HZ-1G6M1 4GB Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 33
    Around 15% lower latency
  • Faster reading speed, GB/s
    12.9 left arrow 9.6
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 8.6
    Average value in the tests
Micron Technology 18ASF1G72AZ-2G1B1 8GB Reasons to consider
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 33
  • Read speed, GB/s
    12.9 left arrow 9.6
  • Write speed, GB/s
    9.0 left arrow 8.6
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2112 left arrow 2286

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM comparisons

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Memory RAM
Kingston 9965525-018.A00LF 4GB
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Crucial Technology CT51264BD1339.M16F 4GB
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Corsair CMSA8GX3M2A1333C9 4GB
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Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
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Samsung M393A1G40EB1-CRC 8GB
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G Skill Intl F5-6400J3239G16G 16GB
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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Crucial Technology CT16G4DFD824A.M16FB 16GB
Memory RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
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Memory RAM
G Skill Intl F3-1333C9-4GIS 4GB
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Gloway International Co. Ltd. YCT4S2666D19081C 8GB
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Apacer Technology GD2.11173T.001 4GB
Memory RAM
G Skill Intl F5-6400J3239G16G 16GB
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Memory RAM
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Memory RAM
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Memory RAM
Samsung M393B1G70BH0-CK0 8GB
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Corsair CMK64GX4M2A2666C16 32GB
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Memory RAM