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Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M471B5273EB0-CK0 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M471B5273EB0-CK0 4GB

Overall score
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Overall score
star star star star star
Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Differences Specifications Comments

Differences

Micron Technology 16JTF51264HZ-1G6M1 4GB Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 40
    Around 30% lower latency
  • Faster reading speed, GB/s
    12.9 left arrow 12.3
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 8.9
    Average value in the tests
Samsung M471B5273EB0-CK0 4GB Reasons to consider
Samsung M471B5273EB0-CK0 4GB
Report a bug

Specifications

Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M471B5273EB0-CK0 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    28 left arrow 40
  • Read speed, GB/s
    12.9 left arrow 12.3
  • Write speed, GB/s
    9.0 left arrow 8.9
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2112 left arrow 1789

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM comparisons

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Samsung M471B5273EB0-CK0 4GB RAM comparisons

A-DATA Technology AD73I1C1674EV 4GB
Samsung M378B1G73DB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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