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Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M471B5273EB0-CK0 4GB
Compare
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M471B5273EB0-CK0 4GB
Overall score
Micron Technology 16JTF51264HZ-1G6M1 4GB
Overall score
Samsung M471B5273EB0-CK0 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
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Below the latency in the PassMark tests, ns
28
40
Around 30% lower latency
Faster reading speed, GB/s
12.9
12.3
Average value in the tests
Faster write speed, GB/s
9.0
8.9
Average value in the tests
Reasons to consider
Samsung M471B5273EB0-CK0 4GB
Report a bug
Specifications
Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M471B5273EB0-CK0 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
28
40
Read speed, GB/s
12.9
12.3
Write speed, GB/s
9.0
8.9
Memory bandwidth, mbps
12800
12800
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2112
1789
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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