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Micron Technology 4ATF51264AZ-3G2J1 4GB
Samsung M471A1G44AB0-CWE 8GB
Compare
Micron Technology 4ATF51264AZ-3G2J1 4GB vs Samsung M471A1G44AB0-CWE 8GB
Overall score
Micron Technology 4ATF51264AZ-3G2J1 4GB
Overall score
Samsung M471A1G44AB0-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 4ATF51264AZ-3G2J1 4GB
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Below the latency in the PassMark tests, ns
34
50
Around 32% lower latency
Faster reading speed, GB/s
17.3
15.3
Average value in the tests
Faster write speed, GB/s
12.0
10.9
Average value in the tests
Reasons to consider
Samsung M471A1G44AB0-CWE 8GB
Report a bug
Specifications
Complete list of technical specifications
Micron Technology 4ATF51264AZ-3G2J1 4GB
Samsung M471A1G44AB0-CWE 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
34
50
Read speed, GB/s
17.3
15.3
Write speed, GB/s
12.0
10.9
Memory bandwidth, mbps
25600
25600
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2665
2512
Micron Technology 4ATF51264AZ-3G2J1 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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