RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Faster reading speed, GB/s
15.6
13.8
Average value in the tests
Faster write speed, GB/s
11.8
9.8
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
27
51
Around -89% lower latency
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
27
Read speed, GB/s
15.6
13.8
Write speed, GB/s
11.8
9.8
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2687
2323
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB RAM comparisons
Apacer Technology 78.01G86.9H50C 1GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3600C16-8GTZR 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3200C15-16GTZSK 16GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3600C17-8GTZR 8GB
Kingston 99U5403-465.A00LF 8GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
SK Hynix HYMP112S64CP6-S6 1GB
A-DATA Technology DDR4 3000 2OZ 8GB
Kingston 99U5584-001.A00LF 4GB
Avant Technology W642GU42J9266N8 16GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CM4X8GE2666C16K8 8GB
Kingston 9905403-011.A03LF 2GB
A Force Manufacturing Ltd. UD-01G64V2133P 8GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3600C14-8GTRSB 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
Samsung M471B5673FH0-CF8 2GB
SK Hynix HMA82GS6CJR8N-UH 16GB
Report a bug
×
Bug description
Source link