Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2K40CB2-CTD 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung M393A2K40CB2-CTD 16GB

Overall score
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Overall score
star star star star star
Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

Differences

  • Below the latency in the PassMark tests, ns
    51 left arrow 52
    Around 2% lower latency
  • Faster reading speed, GB/s
    15.6 left arrow 10
    Average value in the tests
  • Faster write speed, GB/s
    11.8 left arrow 7.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 21300
    Around 1.2% higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M393A2K40CB2-CTD 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    51 left arrow 52
  • Read speed, GB/s
    15.6 left arrow 10.0
  • Write speed, GB/s
    11.8 left arrow 7.3
  • Memory bandwidth, mbps
    25600 left arrow 21300
Other
  • Description
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2687 left arrow 2306
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