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Micron Technology 8JSF25664HZ-1G4D1 2GB
Samsung M378A1K43BB1-CRC 8GB
Compare
Micron Technology 8JSF25664HZ-1G4D1 2GB vs Samsung M378A1K43BB1-CRC 8GB
Overall score
Micron Technology 8JSF25664HZ-1G4D1 2GB
Overall score
Samsung M378A1K43BB1-CRC 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8JSF25664HZ-1G4D1 2GB
Report a bug
Reasons to consider
Samsung M378A1K43BB1-CRC 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
41
Around -86% lower latency
Faster reading speed, GB/s
15.9
10.7
Average value in the tests
Faster write speed, GB/s
9.5
7.5
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 8JSF25664HZ-1G4D1 2GB
Samsung M378A1K43BB1-CRC 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
41
22
Read speed, GB/s
10.7
15.9
Write speed, GB/s
7.5
9.5
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
1335
2611
Micron Technology 8JSF25664HZ-1G4D1 2GB RAM comparisons
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Samsung M378A1K43BB1-CRC 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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