RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Compare
Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Overall score
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Overall score
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Report a bug
Below the latency in the PassMark tests, ns
37
73
Around 49% lower latency
Reasons to consider
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Report a bug
Faster reading speed, GB/s
15.2
13.9
Average value in the tests
Faster write speed, GB/s
9.1
8.6
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
37
73
Read speed, GB/s
13.9
15.2
Write speed, GB/s
8.6
9.1
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2395
1843
Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM comparisons
SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB RAM comparisons
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PNY Electronics PNY 2GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
AMD R5316G1609U2K 8GB
SK Hynix HMA82GU6MFR8N-TF 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMW16GX4M1D3000C16 16GB
EVGA 16G-D3-1600-MR 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Lexar Co Limited LD4AS016G-H2666G 16GB
Kingston KF560C40-16 16GB
Micron Technology CT8G4DFD8213.16FA11 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
Corsair CML8GX3M2A1866C9 4GB
Crucial Technology BLS8G4D26BFSB.16FBR2 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-3600C17-8GTRG 8GB
Report a bug
×
Bug description
Source link