RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Inmos + 256MB
Compare
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Inmos + 256MB
Overall score
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Overall score
Inmos + 256MB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Report a bug
Faster reading speed, GB/s
2
11.5
Average value in the tests
Reasons to consider
Inmos + 256MB
Report a bug
Below the latency in the PassMark tests, ns
30
92
Around -207% lower latency
Faster write speed, GB/s
9.1
1,266.1
Average value in the tests
Higher memory bandwidth, mbps
16800
6400
Around 2.63 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Inmos + 256MB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
92
30
Read speed, GB/s
2,105.4
11.5
Write speed, GB/s
1,266.1
9.1
Memory bandwidth, mbps
6400
16800
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 800 MHz
no data
Ranking PassMark (The more the better)
339
2318
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
Inmos + 256MB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Inmos + 256MB
Samsung 1600 CL10 Series 8GB
Corsair CMU32GX4M4C3000C16 8GB
Mushkin 991586 2GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston KMKYF9-MIH 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Patriot Memory (PDP Systems) 3000 C18 Series 16GB
Samsung M393B5170FH0-CK0 4GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Kingston 9965525-155.A00LF 8GB
SK Hynix HMA41GR7AFR8N-TF 8GB
Kingston 99U5584-004.A00LF 4GB
Samsung M378A4G43AB2-CWE 32GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Samsung M378A5244CB0-CTD 4GB
Patriot Memory (PDP Systems) PSD416G32002 16GB
Kingston 99U5429-014.A00LF 4GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK4GX4M1D2400C14 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston 9905702-120.A00G 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Report a bug
×
Bug description
Source link