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Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M471A1G44BB0-CWE 8GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Samsung M471A1G44BB0-CWE 8GB

Overall score
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Overall score
star star star star star
Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Differences Specifications Comments

Differences

Nanya Technology M2N1G64TUH8D5F-AC 1GB Reasons to consider
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Report a bug
  • Faster reading speed, GB/s
    2 left arrow 15.3
    Average value in the tests
Samsung M471A1G44BB0-CWE 8GB Reasons to consider
Samsung M471A1G44BB0-CWE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    60 left arrow 92
    Around -53% lower latency
  • Faster write speed, GB/s
    11.0 left arrow 1,266.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 6400
    Around 4 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Samsung M471A1G44BB0-CWE 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    92 left arrow 60
  • Read speed, GB/s
    2,105.4 left arrow 15.3
  • Write speed, GB/s
    1,266.1 left arrow 11.0
  • Memory bandwidth, mbps
    6400 left arrow 25600
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    339 left arrow 2359

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
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Samsung M471A1G44BB0-CWE 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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