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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Micron Technology 36ASF4G72PZ-2G1A1 32GB

Overall score
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Overall score
star star star star star
Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Differences Specifications Comments

Differences

Nanya Technology M2X4G64CB8HG9N-DG 4GB Reasons to consider
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    36 left arrow 37
    Around 3% lower latency
  • Faster reading speed, GB/s
    14.9 left arrow 9.6
    Average value in the tests
  • Faster write speed, GB/s
    9.5 left arrow 7.8
    Average value in the tests
Micron Technology 36ASF4G72PZ-2G1A1 32GB Reasons to consider
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    36 left arrow 37
  • Read speed, GB/s
    14.9 left arrow 9.6
  • Write speed, GB/s
    9.5 left arrow 7.8
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2292 left arrow 2082

Nanya Technology M2X4G64CB8HG9N-DG 4GB RAM comparisons

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Micron Technology 36ASF4G72PZ-2G1A1 32GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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