Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs Micron Technology 8ATF1G64AZ-2G6H1 8GB

Overall score
star star star star star
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Overall score
star star star star star
Micron Technology 8ATF1G64AZ-2G6H1 8GB

Micron Technology 8ATF1G64AZ-2G6H1 8GB

Differences

  • Faster reading speed, GB/s
    3 left arrow 16.2
    Average value in the tests
  • Faster write speed, GB/s
    2,077.3 left arrow 13.1
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    34 left arrow 61
    Around -79% lower latency
  • Higher memory bandwidth, mbps
    21300 left arrow 6400
    Around 3.33 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    61 left arrow 34
  • Read speed, GB/s
    3,835.2 left arrow 16.2
  • Write speed, GB/s
    2,077.3 left arrow 13.1
  • Memory bandwidth, mbps
    6400 left arrow 21300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    606 left arrow 3020
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