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Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung 18ASF1G72PDZ-2G1B1 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB vs Samsung 18ASF1G72PDZ-2G1B1 16GB

Overall score
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Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Overall score
star star star star star
Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

Differences Specifications Comments

Differences

Nanya Technology M2Y51264TU88B0B-3C 512MB Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Samsung 18ASF1G72PDZ-2G1B1 16GB Reasons to consider
Samsung 18ASF1G72PDZ-2G1B1 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    32 left arrow 54
    Around -69% lower latency
  • Faster reading speed, GB/s
    9.8 left arrow 3
    Average value in the tests
  • Faster write speed, GB/s
    8.6 left arrow 1,308.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 5300
    Around 3.21 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    54 left arrow 32
  • Read speed, GB/s
    3,573.5 left arrow 9.8
  • Write speed, GB/s
    1,308.1 left arrow 8.6
  • Memory bandwidth, mbps
    5300 left arrow 17000
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    371 left arrow 2271

Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons

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Samsung 18ASF1G72PDZ-2G1B1 16GB RAM comparisons

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Latest comparisons

Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
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Samsung 18ASF1G72PDZ-2G1B1 16GB
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