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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Compare
Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Overall score
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT2GT64U8HD0BN-AD 2GB
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Faster reading speed, GB/s
4
13.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
72
Around -157% lower latency
Faster write speed, GB/s
10.1
1,938.7
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
72
28
Read speed, GB/s
4,241.0
13.8
Write speed, GB/s
1,938.7
10.1
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
677
2179
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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