RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Compare
Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Overall score
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Overall score
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Report a bug
Below the latency in the PassMark tests, ns
64
72
Around 11% lower latency
Faster reading speed, GB/s
4
15.3
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Report a bug
Faster write speed, GB/s
8.0
2,256.8
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
64
72
Read speed, GB/s
4,651.3
15.3
Write speed, GB/s
2,256.8
8.0
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
837
1817
Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM comparisons
G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-14900CL9-4GBSR 4GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Kingston KTC1G-UDIMM 1GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Apacer Technology 76.D305G.D060B 16GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3333C16-4GRKD 4GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Corsair CMK64GX4M4D3600C18 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Golden Empire CL16-16-16 D4-2800 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 9905599-010.A00G 4GB
PNY Electronics PNY 2GB
Apacer Technology 78.CAGP7.AZC0B 8GB
SK Hynix 8GB36-H9 8GB
Samsung M378A1G43TB1-CTD 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology CT8G4DFD8213.C16FDD2 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
AMD R9S48G3206U2S 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix HMA451U6MFR8N-TF 4GB
Report a bug
×
Bug description
Source link