RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
14.5
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Report a bug
Faster write speed, GB/s
8.0
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
71
Read speed, GB/s
2,831.6
14.5
Write speed, GB/s
1,322.6
8.0
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
399
1863
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5170FH0-CK0 4GB
Corsair CM4X8GE2133C13K4 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Essencore Limited 8GBF1X08QFHH38-135-K 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston 99U5712-009.A00G 16GB
Kingston KP4T2F-PSB 4GB
Corsair CMW32GX4M2Z3600C14 16GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3200C16-8GTZKO 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
Kingston KVR16N11/8-SP 8GB
AMD R744G2606U1S 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMK16GX4M4A2666C16 4GB
Samsung M393B2G70BH0-CK0 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Kingston KHX318C10FR/8G 8GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
G Skill Intl F3-1866C8-8GTX 8GB
Samsung M393A2G40EB1-CPB 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Report a bug
×
Bug description
Source link