RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
17.2
Average value in the tests
Reasons to consider
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
71
Around -173% lower latency
Faster write speed, GB/s
17.1
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
26
Read speed, GB/s
2,831.6
17.2
Write speed, GB/s
1,322.6
17.1
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
399
3757
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB RAM comparisons
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair VSA2GSDS667C4 2GB
G Skill Intl F4-3200C16-16GSXKB 16GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-4266C17-8GTZR 8GB
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
Patriot Memory (PDP Systems) PSD34G16002 4GB
SK Hynix HMA82GU6JJR8N-VK 16GB
Crucial Technology CT102464BF160B-16F 8GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMD32GX4M2B3000C15 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-4000C19-4GTZ 4GB
Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-3466C16-4GVK 4GB
A-DATA Technology DDR4 2400 16GB
G Skill Intl F4-4400C19-8GTZKK 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-3600C18-16GVK 16GB
Kingston KHX16LC9/8GX 8GB
Kingston MSI24D4S7S8S8-8 8GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMK64GX4M4C3000C16 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3400C16-16GVK 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-4000C16-16GTRSA 16GB
Report a bug
×
Bug description
Source link