RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Compare
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Overall score
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Overall score
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Report a bug
Reasons to consider
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Report a bug
Below the latency in the PassMark tests, ns
23
35
Around -52% lower latency
Faster reading speed, GB/s
19.6
13.7
Average value in the tests
Faster write speed, GB/s
18.8
9.6
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
35
23
Read speed, GB/s
13.7
19.6
Write speed, GB/s
9.6
18.8
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2312
4095
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM comparisons
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Samsung M393B1G70BH0-YK0 8GB
Apacer Technology 78.C1GMM.AUW0C 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
Team Group Inc. Team-Elite-1333 4GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Crucial Technology CT51264BF160BJ.C8F 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Panram International Corporation PUD42400C154GNJW 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Panram International Corporation PUD42400C154G4NJK 4GB
Report a bug
×
Bug description
Source link