RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
G Skill Intl F4-3800C14-16GTZN 16GB
Compare
PNY Electronics PNY 2GB vs G Skill Intl F4-3800C14-16GTZN 16GB
Overall score
PNY Electronics PNY 2GB
Overall score
G Skill Intl F4-3800C14-16GTZN 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
30
Around 10% lower latency
Reasons to consider
G Skill Intl F4-3800C14-16GTZN 16GB
Report a bug
Faster reading speed, GB/s
21.7
13.8
Average value in the tests
Faster write speed, GB/s
16.6
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
G Skill Intl F4-3800C14-16GTZN 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
30
Read speed, GB/s
13.8
21.7
Write speed, GB/s
8.4
16.6
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2274
3806
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
G Skill Intl F4-3800C14-16GTZN 16GB RAM comparisons
Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PNY Electronics PNY 2GB
G Skill Intl F4-3800C14-16GTZN 16GB
PNY Electronics PNY 2GB
Samsung M391A1K43BB2-CTD 8GB
Mushkin 991988 (996988) 4GB
Avant Technology W642GU42J5213N2 16GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2B1600C9 2GB
Kingston 9905403-061.A00LF 2GB
Samsung M471A5244CB0-CRC 4GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Samsung M471B5674QH0-YK0 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Samsung M378B5773DH0-CH9 2GB
Ramaxel Technology RMUA5110MD78HAF-2666 8GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-2133C15-4GRK 4GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston KHX2666C16/8G 8GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2800C15-8GTXG 8GB
Samsung M378B5273DH0-CH9 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
Kingston 99U5584-017.A00LF 4GB
G Skill Intl F4-2800C16-8GVG 8GB
Kingston 9965525-140.A00LF 8GB
Kingston XN205T-MIE 16GB
Report a bug
×
Bug description
Source link