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PNY Electronics PNY 2GB
INTENSO 4GB

PNY Electronics PNY 2GB vs INTENSO 4GB

Overall score
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
INTENSO 4GB

INTENSO 4GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB Reasons to consider
PNY Electronics PNY 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 36
    Around 25% lower latency
  • Faster reading speed, GB/s
    13.8 left arrow 12.1
    Average value in the tests
INTENSO 4GB Reasons to consider
INTENSO 4GB
Report a bug
  • Faster write speed, GB/s
    9.3 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
INTENSO 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 36
  • Read speed, GB/s
    13.8 left arrow 12.1
  • Write speed, GB/s
    8.4 left arrow 9.3
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 2061

PNY Electronics PNY 2GB RAM comparisons

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

INTENSO 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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