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PNY Electronics PNY 2GB
Samsung M471A1G44BB0-CWE 8GB
Compare
PNY Electronics PNY 2GB vs Samsung M471A1G44BB0-CWE 8GB
Overall score
PNY Electronics PNY 2GB
Overall score
Samsung M471A1G44BB0-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
60
Around 55% lower latency
Reasons to consider
Samsung M471A1G44BB0-CWE 8GB
Report a bug
Faster reading speed, GB/s
15.3
13.8
Average value in the tests
Faster write speed, GB/s
11.0
8.4
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Samsung M471A1G44BB0-CWE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
60
Read speed, GB/s
13.8
15.3
Write speed, GB/s
8.4
11.0
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2274
2359
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Samsung M471A1G44BB0-CWE 8GB RAM comparisons
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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