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PNY Electronics PNY 2GB
Super Talent F26UB16GH 16GB

PNY Electronics PNY 2GB vs Super Talent F26UB16GH 16GB

Overall score
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
Super Talent F26UB16GH 16GB

Super Talent F26UB16GH 16GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB Reasons to consider
PNY Electronics PNY 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 29
    Around 7% lower latency
  • Faster reading speed, GB/s
    13.8 left arrow 8.7
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 6.5
    Average value in the tests
Super Talent F26UB16GH 16GB Reasons to consider
Super Talent F26UB16GH 16GB
Report a bug
  • Higher memory bandwidth, mbps
    21300 left arrow 10600
    Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
Super Talent F26UB16GH 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 29
  • Read speed, GB/s
    13.8 left arrow 8.7
  • Write speed, GB/s
    8.4 left arrow 6.5
  • Memory bandwidth, mbps
    10600 left arrow 21300
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 14 15 16 17 18 19
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 1769

PNY Electronics PNY 2GB RAM comparisons

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Super Talent F26UB16GH 16GB RAM comparisons

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Kingston KHX2666C16D4/16GX 16GB
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