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PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Compare
PNY Electronics PNY 2GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Overall score
PNY Electronics PNY 2GB
Overall score
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Reasons to consider
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Report a bug
Faster reading speed, GB/s
18.7
13.8
Average value in the tests
Faster write speed, GB/s
17.8
8.4
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
27
Read speed, GB/s
13.8
18.7
Write speed, GB/s
8.4
17.8
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2274
3963
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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