RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PUSKILL PJ16TFK1GM8 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Compare
PUSKILL PJ16TFK1GM8 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Overall score
PUSKILL PJ16TFK1GM8 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
PUSKILL PJ16TFK1GM8 16GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
41
Around -58% lower latency
Faster reading speed, GB/s
16.8
12.7
Average value in the tests
Faster write speed, GB/s
13.5
10.7
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
PUSKILL PJ16TFK1GM8 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
41
26
Read speed, GB/s
12.7
16.8
Write speed, GB/s
10.7
13.5
Memory bandwidth, mbps
19200
21300
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2621
2880
PUSKILL PJ16TFK1GM8 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM comparisons
Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3200C15-16GVR 16GB
PUSKILL PJ16TFK1GM8 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
Samsung M3 78T6553CZ3-CD5 512MB
G Skill Intl F4-3600C16-8GTRGC 8GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-5333C22-8GTRG 8GB
Samsung M393B1K70QB0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
Samsung M393B1K70CH0-CH9 8GB
Kingston 99U5701-049.A00G 16GB
Kingston 9905469-143.A00LF 4GB
Kingston ACR26D4U9S1KA-4 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 99U5665-001.A00G 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3600C18-16GTRG 16GB
Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-4400C17-16GTZR 16GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CMK8GX4M2B4266C19 4GB
Samsung M393B5170FH0-CK0 4GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Super Talent F24UB16GV 16GB
Report a bug
×
Bug description
Source link