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Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Ramaxel Technology RMSA3260NA78HAF-2666 8GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
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Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
42
Around -14% lower latency
Faster reading speed, GB/s
16
13.3
Average value in the tests
Faster write speed, GB/s
12.6
7.8
Average value in the tests
Specifications
Complete list of technical specifications
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
42
37
Read speed, GB/s
13.3
16.0
Write speed, GB/s
7.8
12.6
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2181
2808
Ramaxel Technology RMSA3260NA78HAF-2666 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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