RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Chun Well Technology Holding Limited D4U0836181B 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Chun Well Technology Holding Limited D4U0836181B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
32
Around 22% lower latency
Faster reading speed, GB/s
16.1
15.6
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited D4U0836181B 8GB
Report a bug
Faster write speed, GB/s
12.8
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
32
Read speed, GB/s
16.1
15.6
Write speed, GB/s
10.1
12.8
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 12 14 16 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
3279
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T5663RZ3-CF7 2GB
SK Hynix HMA81GU6CJR8N-UH 8GB
A-DATA Technology VDQVE1B16 2GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Kingston KHX1866C9D3/8GX 8GB
Smart Modular SF4642G8CK8IEHLSBG 16GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3600C16-32GTZR 32GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-4133C19-8GTZSWC 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9905702-014.A00G 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BL4G24C16U4B.8FE 4GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMD16GX4M4A2666C15 4GB
SK Hynix DDR2 800 2G 2GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
Kingston 9905403-156.A00LF 2GB
Corsair CMK16GX4M4A2800C16 4GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9965589-017.D00G 8GB
Kingston KHX1600C9D3/8GX 8GB
Kingston KHX318C10FR/8G 8GB
Kingston KVR800D2N6/2G 2GB
Apacer Technology 78.B1GN3.4032B 4GB
Report a bug
×
Bug description
Source link