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Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB

Samsung 1600 CL10 Series 8GB vs Chun Well Technology Holding Limited D4U0836181B 8GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Chun Well Technology Holding Limited D4U0836181B 8GB

Chun Well Technology Holding Limited D4U0836181B 8GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 32
    Around 22% lower latency
  • Faster reading speed, GB/s
    16.1 left arrow 15.6
    Average value in the tests
Chun Well Technology Holding Limited D4U0836181B 8GB Reasons to consider
Chun Well Technology Holding Limited D4U0836181B 8GB
Report a bug
  • Faster write speed, GB/s
    12.8 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 32
  • Read speed, GB/s
    16.1 left arrow 15.6
  • Write speed, GB/s
    10.1 left arrow 12.8
  • Memory bandwidth, mbps
    12800 left arrow 21300
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 14 16 18 19 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 3279

Samsung 1600 CL10 Series 8GB RAM comparisons

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Chun Well Technology Holding Limited D4U0836181B 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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