RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4200C19-4GTZ 4GB
Compare
Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-4200C19-4GTZ 4GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
G Skill Intl F4-4200C19-4GTZ 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
75
Around 67% lower latency
Faster reading speed, GB/s
16.1
14.5
Average value in the tests
Faster write speed, GB/s
10.1
7.6
Average value in the tests
Reasons to consider
G Skill Intl F4-4200C19-4GTZ 4GB
Report a bug
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4200C19-4GTZ 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
75
Read speed, GB/s
16.1
14.5
Write speed, GB/s
10.1
7.6
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
1735
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4200C19-4GTZ 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Kingston KF3600C16D4/16GX 16GB
Samsung M378B5673EH1-CF8 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
takeMS International AG TMS2GB264D083805EV 2GB
G Skill Intl F4-2400C17-8GNT 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
G Skill Intl F4-4000C17-8GTZRB 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMR32GX4M2A2666C16 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C15-8GVS 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C16-8GTZR 8GB
Samsung M378B5673FH0-CH9 2GB
Ramaxel Technology RMSA3330ME88HCF-3200 32GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3600C16-32GTZR 32GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Samsung M393B2G70BH0-YK0 16GB
Corsair CMR16GX4M2C 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3000C16-16GISB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK128GX4M8B3333C16 16GB
Kingston KHX8500D2K2/2GN 1GB
Samsung M471A2K43CB1-CRCR 16GB
Report a bug
×
Bug description
Source link