Samsung 1600 CL10 Series 8GB
Micron Technology AFSD416ES1P 16GB

Samsung 1600 CL10 Series 8GB vs Micron Technology AFSD416ES1P 16GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

Differences

  • Faster reading speed, GB/s
    16.1 left arrow 14.5
    Average value in the tests
  • Faster write speed, GB/s
    10.7 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology AFSD416ES1P 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 25
  • Read speed, GB/s
    16.1 left arrow 14.5
  • Write speed, GB/s
    10.1 left arrow 10.7
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 2620
RAM Latency Calculator
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