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Samsung 1600 CL10 Series 8GB
Micron Technology ILG8GS2400A 8GB

Samsung 1600 CL10 Series 8GB vs Micron Technology ILG8GS2400A 8GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Micron Technology ILG8GS2400A 8GB

Micron Technology ILG8GS2400A 8GB

Differences Specifications Comments

Differences

Samsung 1600 CL10 Series 8GB Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
  • Faster reading speed, GB/s
    16.1 left arrow 15
    Average value in the tests
Micron Technology ILG8GS2400A 8GB Reasons to consider
Micron Technology ILG8GS2400A 8GB
Report a bug
  • Faster write speed, GB/s
    11.4 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Micron Technology ILG8GS2400A 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 25
  • Read speed, GB/s
    16.1 left arrow 15.0
  • Write speed, GB/s
    10.1 left arrow 11.4
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 2549

Samsung 1600 CL10 Series 8GB RAM comparisons

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Samsung 1600 CL10 Series 8GB

Micron Technology ILG8GS2400A 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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