Samsung DDR3 8GB 1600MHz 8GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Overall score

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Overall score

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Differences Specifications Comments

Differences

Samsung DDR3 8GB 1600MHz 8GB

Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB

Below the latency in the PassMark tests, ns

43 50

Around 14% lower latency
Faster reading speed, GB/s

14.9 12.5

Average value in the tests
Faster write speed, GB/s

9.6 7.3

Average value in the tests

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Reasons to consider
Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Higher memory bandwidth, mbps

21300 12800

Around 1.66 higher bandwidth

Specifications

Complete list of technical specifications

Samsung DDR3 8GB 1600MHz 8GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

43 50
Read speed, GB/s

14.9 12.5
Write speed, GB/s

9.6 7.3
Memory bandwidth, mbps

12800 21300

Other

Description

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2506 2326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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