RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Compare
Samsung DDR3 8GB 1600MHz 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Overall score
Samsung DDR3 8GB 1600MHz 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB
Report a bug
Faster reading speed, GB/s
14.9
14.3
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
43
Around -54% lower latency
Faster write speed, GB/s
11.4
9.6
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
43
28
Read speed, GB/s
14.9
14.3
Write speed, GB/s
9.6
11.4
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2506
2481
Samsung DDR3 8GB 1600MHz 8GB RAM comparisons
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR4 3200 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Kingston 99U5458-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-2666C18-8GFX 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMK8GX4M2C3000C16 4GB
Crucial Technology CT25664AA800.M16FG 2GB
Samsung M471A4G43MB1-CTD 32GB
SK Hynix HYMP512S64CP8-Y5 1GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
SK Hynix HMT325U6BFR8C-H9 2GB
Corsair CMK16GX4M2K4266C16 8GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3600C18-8GVK 8GB
AMD R534G1601U1S-UO 4GB
Team Group Inc. TEAMGROUP-UD4-3733 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C14-8GTZ 8GB
Kingston 99U5428-063.A00LF 8GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C14-32GTZR 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C17-8GTZRB 8GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3466C16-16GTZ 16GB
Report a bug
×
Bug description
Source link