RAM comparison Samsung DDR3 8GB 1600MHz 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Samsung DDR3 8GB 1600MHz 8GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Overall score

Samsung DDR3 8GB 1600MHz 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung DDR3 8GB 1600MHz 8GB

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Below the latency in the PassMark tests, ns

28 43

Around -54% lower latency
Faster write speed, GB/s

11.4 9.6

Average value in the tests
Higher memory bandwidth, mbps

17000 12800

Around 1.33 higher bandwidth

Complete list of technical specifications

Samsung DDR3 8GB 1600MHz 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

2506 2481

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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