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Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Compare
Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 4ATF51264AZ-2G6E1 4GB
Overall score
Samsung M3 78T2863EHS-CF7 1GB
Overall score
Micron Technology 4ATF51264AZ-2G6E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2863EHS-CF7 1GB
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Faster reading speed, GB/s
4
16.4
Average value in the tests
Faster write speed, GB/s
2,123.3
12.1
Average value in the tests
Reasons to consider
Micron Technology 4ATF51264AZ-2G6E1 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
59
Around -74% lower latency
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
59
34
Read speed, GB/s
4,833.8
16.4
Write speed, GB/s
2,123.3
12.1
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
731
2616
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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