RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T2953EZ3-CF7 1GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
Compare
Samsung M3 78T2953EZ3-CF7 1GB vs Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
Overall score
Samsung M3 78T2953EZ3-CF7 1GB
Overall score
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T2953EZ3-CF7 1GB
Report a bug
Below the latency in the PassMark tests, ns
58
63
Around 8% lower latency
Faster reading speed, GB/s
4
16.1
Average value in the tests
Reasons to consider
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
Report a bug
Faster write speed, GB/s
9.1
1,950.7
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T2953EZ3-CF7 1GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
58
63
Read speed, GB/s
4,241.0
16.1
Write speed, GB/s
1,950.7
9.1
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
651
1932
Samsung M3 78T2953EZ3-CF7 1GB RAM comparisons
Corsair VS1GB800D2 1GB
Kingston KVR800D2N6/2G 2GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73QH0-YK0 8GB
Transcend Information TS2GSH64V6B 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology CT8G4DFS8213.C8FH1 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Wilk Elektronik S.A. GR2666D464L19S/4G 4GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology BL32G36C16U4B.M16FB1 32GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLS8G4D30BESBK.8FD 8GB
Samsung M3 93T5750CZA-CE6 2GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Kingston 9905584-016.A00LF 4GB
JUHOR JHD2666U1908JG 8GB
Protocol Engines Kingrock 800 2GB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
AMD AE34G1601U1 4GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BL8G26C16U4W.8FD 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston ACR24D4S7S8MB-8 8GB
Crucial Technology CT102464BF160B.C16 8GB
Heoriady HX2666CX15D4/4G 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston ACR26D4U9S8HJ-8 8GB
Report a bug
×
Bug description
Source link