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Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Overall score
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Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Overall score
star star star star star
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Differences Specifications Comments

Differences

Samsung M3 78T3354BZ0-CCC 256MB Reasons to consider
Samsung M3 78T3354BZ0-CCC 256MB
Report a bug
  • Faster reading speed, GB/s
    2 left arrow 19.1
    Average value in the tests
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB Reasons to consider
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 46
    Around -70% lower latency
  • Faster write speed, GB/s
    16.2 left arrow 1,519.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 3200
    Around 5.31 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 27
  • Read speed, GB/s
    2,909.8 left arrow 19.1
  • Write speed, GB/s
    1,519.2 left arrow 16.2
  • Memory bandwidth, mbps
    3200 left arrow 17000
Other
  • Description
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • Timings / Clock speed
    3-3-3-12 / 400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    241 left arrow 3784

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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