RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Compare
Samsung M3 78T5663RZ3-CE6 2GB vs Chun Well Technology Holding Limited D4U0836144B 8GB
Overall score
Samsung M3 78T5663RZ3-CE6 2GB
Overall score
Chun Well Technology Holding Limited D4U0836144B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M3 78T5663RZ3-CE6 2GB
Report a bug
Faster reading speed, GB/s
4
16.4
Average value in the tests
Faster write speed, GB/s
2,168.2
14.9
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited D4U0836144B 8GB
Report a bug
Below the latency in the PassMark tests, ns
19
60
Around -216% lower latency
Higher memory bandwidth, mbps
21300
5300
Around 4.02 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M3 78T5663RZ3-CE6 2GB
Chun Well Technology Holding Limited D4U0836144B 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
60
19
Read speed, GB/s
4,595.2
16.4
Write speed, GB/s
2,168.2
14.9
Memory bandwidth, mbps
5300
21300
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 12 14 16 18 19 20
Timings / Clock speed
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
941
3521
Samsung M3 78T5663RZ3-CE6 2GB RAM comparisons
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Chun Well Technology Holding Limited D4U0836144B 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965669-018.A00G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T5663RZ3-CE6 2GB
Chun Well Technology Holding Limited D4U0836144B 8GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Apacer Technology GD2.1527WC.001 8GB
Samsung M393B1K70CHD-CH9 8GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT16G4SFRA32A.C16FJ 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston 9905665-020.A00G 4GB
Samsung M393B5170FH0-CH9 4GB
V-GEN D4H4GS24A8 4GB
Samsung DDR3 8GB 1600MHz 8GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Kingston 9965525-155.A00LF 8GB
Kingston 99U5701-036.A00G 16GB
Kingston 9905584-016.A00LF 4GB
Kingston 99U5713-003.A00G 4GB
SK Hynix HYMP125S64CP8-S6 2GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
A-DATA Technology DQKD1A08 1GB
Kingston XRGM6C-MIE 16GB
Samsung M471B5273DH0-CH9 4GB
Patriot Memory (PDP Systems) PSD48G320081 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMD16GX4M2K4133C19 8GB
Report a bug
×
Bug description
Source link